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(R)
T620-600W T630-600W
SNUBBERLESS TRIAC
FEATURES
s
s
s
s
s
ITRMS = 6A VDRM = VRRM = 600V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734
A2
A1
G
DESCRIPTION The T620-600W and T630-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) Parameter Tc= 100C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/s. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case Value 6 66 75 28 20 100 - 40 to + 150 - 40 to + 125 260 C C A2s A/s Unit A A
G A1 A2
ISOWATT220AB (Plastic)
Symbol VDRM VRRM
Parameter Repetitive peak off-state voltage Tj = 125C
Value 600
Unit V
September 2001 - Ed: 1A
1/5
T620-600W / T630-600W
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360 conduction angle) Parameter Value 50 3.4 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dlG/dt= 3As IT= 100mA Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 3.3 A/ms note) (see Tj= 125C Tj= 125C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T620 20 1.5 0.2 2 50 V A mA V/s V/s T630 30 Unit mA V V s IGM = 4 A (tp = 20 s)
ITM= 8.5A tp= 380s VDRM rated VRRM rated
* For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 3.3 A/ms, the (dV/dt)c is always lower than 10V/s, and, therefore, it is unnecessary to use a snuber R-C network accross T620W / T630W triacs.
2/5
T620-600W / T630-600W
Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W)
180
O
P(W)
8
= 180 = 120 = 90
o o o
Tcase (oC)
8
-95 -100
6
o
6
Rth = 0 o C/W o 2.5 C/W o 5 C/W 10 o C/W
-105 -110 -115
4
= 30
= 60
o
4
2
2
I T(RMS) (A)
0 0 1 2 3 4 5 6
0
0
Tamb ( C)
o
-120 -125
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration.
Zth/Rth 1
Zth(j-c)
I
T(RMS)
(A)
7 6 5 4
= 180
o
0.1
Zth(j-a)
3 2 1 0
0 10 20 30
0.01
Tcase( C)
40 50 60 70 80 90 100 110 120 130
o
tp(s)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C]
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 Igt
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
70
Ih[Tj] Ih[Tj=25 o C]
Tj initial = 25 C
60 50 40 30 20 10
o
Ih
Tj(oC)
0 20 40 60 80 100 120 140
0 1
Number of cycles
10 100
1000
3/5
T620-600W / T630-600W
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp (R) 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
100
Tj initial = 25 oC
Tj initial o 25 C
1000
I TSM
100
I2 t
10
Tj max
10
1
Tj max Vto =0.9V Rt =0.062
tp(ms)
VTM (V)
1 1
10
0.1 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
4/5
T620-600W / T630-600W
PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 15.90 9.00 3.00 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 16.40 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 1.125 0.386 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.646 0.366 0.126
16.00 typ.
0.630 typ.
s
s
s
s
s
Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5
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